Infineon HEXFET N-Channel MOSFET, 522 A, 40 V, 6-Pin D2PAK IRFS7430TRL7PP
- RS Stock No.:
- 872-4202
- Mfr. Part No.:
- IRFS7430TRL7PP
- Brand:
- Infineon
Subtotal (1 pack of 4 units)*
£9.44
(exc. VAT)
£11.32
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 64 unit(s) ready to ship
- Plus 8 unit(s) ready to ship from another location
- Plus 5,296 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 + | £2.36 | £9.44 |
*price indicative
- RS Stock No.:
- 872-4202
- Mfr. Part No.:
- IRFS7430TRL7PP
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 522 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 750 μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 305 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 522 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 750 μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 305 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Forward Diode Voltage 1.2V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRFS7430TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK AUIRFS8409-7TRL
- Infineon HEXFET N-Channel MOSFET 200 V, 6-Pin TSOP-6 IRF5801TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 6-Pin TSOP-6 IRFTS8342TRPBF
- Infineon HEXFET N-Channel MOSFET 80 V, 6-Pin DFN2020 IRL80HS120
- Infineon HEXFET N-Channel MOSFET 20 V, 6-Pin Micro6 IRLMS2002TRPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 6-Pin DirectFET ISOMETRIC AUIRF7640S2TR
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK IRFZ44ESTRLPBF