Infineon HEXFET N-Channel MOSFET, 6.5 A, 20 V, 6-Pin Micro6 IRLMS2002TRPBF

Subtotal (1 reel of 3000 units)*

£561.00

(exc. VAT)

£672.00

(inc. VAT)

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3000 +£0.187£561.00

*price indicative

RS Stock No.:
165-5840
Mfr. Part No.:
IRLMS2002TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

Micro6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.75mm

Typical Gate Charge @ Vgs

15 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

1.3mm

RoHS Status: Exempt

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 6.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRLMS2002TRPBF


This N-channel MOSFET is designed for effective performance in battery management and load management applications. Its ability to provide low on-resistance alongside high temperature resilience contributes to efficient operation across diverse electronic systems. With state-of-the-art processing techniques, this product is ideal for professionals in the automation, electronics, and electrical sectors.

Features & Benefits


• Surface mount design minimises PCB space usage
• Low on-resistance enhances power efficiency
• Continuous drain current capability of up to 6.5A
• Supports ±12V gate-to-source voltage for flexible control
• Efficient thermal performance reduces heat generation

Applications


• Battery management for optimal energy distribution
• Load management in various electronic devices
• Automotive requiring robust power handling
• High-efficiency power supply systems
• Renewable energy systems for energy regulation

What is the maximum continuous drain current at elevated temperatures?


At a temperature of 70°C, a continuous drain current of 5.2A can be achieved while maintaining stability under specified conditions.

What is the thermal resistance for effective performance?


The maximum junction-to-ambient thermal resistance is 62.5°C/W, ensuring effective heat dissipation during operation.

How do I ensure optimum performance during installation?


Proper thermal management and careful consideration of PCB layout are essential for optimal performance, allowing for efficient heat dissipation and reliability.

What voltage can be applied without risking breakdown?


The maximum drain-source voltage is 20V, which serves as a critical threshold to prevent unnecessary breakdown during operation.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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