Infineon HEXFET N-Channel MOSFET, 6.5 A, 20 V, 6-Pin Micro6 IRLMS2002TRPBF
- RS Stock No.:
- 165-5840
- Mfr. Part No.:
- IRLMS2002TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£561.00
(exc. VAT)
£672.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 February 2026
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.187 | £561.00 |
*price indicative
- RS Stock No.:
- 165-5840
- Mfr. Part No.:
- IRLMS2002TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.5 A | |
Maximum Drain Source Voltage | 20 V | |
Series | HEXFET | |
Package Type | Micro6 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 45 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.2V | |
Minimum Gate Threshold Voltage | 0.6V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 3mm | |
Width | 1.75mm | |
Typical Gate Charge @ Vgs | 15 nC @ 5 V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.3mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Series HEXFET | ||
Package Type Micro6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Width 1.75mm | ||
Typical Gate Charge @ Vgs 15 nC @ 5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.3mm | ||
RoHS Status: Exempt
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon HEXFET Series MOSFET, 6.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRLMS2002TRPBF
Features & Benefits
• Low on-resistance enhances power efficiency
• Continuous drain current capability of up to 6.5A
• Supports ±12V gate-to-source voltage for flexible control
• Efficient thermal performance reduces heat generation
Applications
• Load management in various electronic devices
• Automotive requiring robust power handling
• High-efficiency power supply systems
• Renewable energy systems for energy regulation
What is the maximum continuous drain current at elevated temperatures?
What is the thermal resistance for effective performance?
How do I ensure optimum performance during installation?
What voltage can be applied without risking breakdown?
Related links
- Infineon HEXFET N-Channel MOSFET 20 V, 6-Pin Micro6 IRLMS2002TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 30 V, 6-Pin Micro6 IRLMS1503TRPBF
- Infineon HEXFET P-Channel MOSFET 20 V, 6-Pin Micro6 IRLMS6702TRPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 6-Pin TSOP-6 IRF5801TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 6-Pin TSOP-6 IRFTS8342TRPBF
- Infineon HEXFET N-Channel MOSFET 80 V, 6-Pin DFN2020 IRL80HS120
- Infineon HEXFET N-Channel MOSFET 40 V, 6-Pin D2PAK IRFS7430TRL7PP
- Infineon HEXFET N-Channel MOSFET 60 V, 6-Pin DirectFET ISOMETRIC AUIRF7640S2TR