Infineon HEXFET Dual Silicon N-Channel MOSFET, 3.2 A, 30 V, 6-Pin Micro6 IRLMS1503TRPBF

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Subtotal (1 pack of 50 units)*

£12.60

(exc. VAT)

£15.10

(inc. VAT)

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Temporarily out of stock
  • 3,000 unit(s) shipping from 27 November 2025
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Units
Per unit
Per Pack*
50 - 50£0.252£12.60
100 - 200£0.189£9.45
250 - 450£0.179£8.95
500 - 1200£0.166£8.30
1250 +£0.139£6.95

*price indicative

Packaging Options:
RS Stock No.:
262-6786
Mfr. Part No.:
IRLMS1503TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

Micro6

Mounting Type

Surface Mount

Pin Count

6

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

The Infineon power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is combined with the fast switching speed and ruggedized device design that power MOSFET well known for, provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra low Rds
N-channel

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