Infineon HEXFET N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 IRF5801TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

3mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

3.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.5mm

Height

0.9mm

Minimum Operating Temperature

-55 °C