Infineon HEXFET N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 IRF5801TRPBF
- RS Stock No.:
- 919-4725
- Mfr. Part No.:
- IRF5801TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£318.00
(exc. VAT)
£381.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 15,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.106 | £318.00 |
*price indicative
- RS Stock No.:
- 919-4725
- Mfr. Part No.:
- IRF5801TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TSOP-6 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 2.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 3.9 nC @ 10 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 1.5mm | |
| Transistor Material | Si | |
| Height | 0.9mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 2.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 3.9 nC @ 10 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 1.5mm | ||
Transistor Material Si | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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