MPN

Infineon HEXFET P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 IRFTS9342TRPBF

RS Stock No.:: 165-8190
Mfr. Part No.:: IRFTS9342TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 IRFTS9342TRPBF

Bulk discount available

Subtotal (1 reel of 3000 units)*

£342.00

(exc. VAT)

£411.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

999,999,000 unit(s) shipping from 28 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 - 3000	£0.114	£342.00
6000 - 6000	£0.108	£324.00
9000 +	£0.101	£303.00

*price indicative

RS Stock No.:: 165-8190
Mfr. Part No.:: IRFTS9342TRPBF
Brand:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 5.8A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRFTS9342TRPBF

This MOSFET is designed for high efficiency across various applications, playing a critical role in electronic circuits that require enhanced performance and dependability. Its low on-resistance and significant current-handling capabilities contribute to energy efficiency and system stability in automation and electrical applications.

Features & Benefits

• Low Rds(on) improves energy efficiency
• Continuous drain current support of 5.8 A for effective performance
• Maximum drain-source voltage of 30 V ensures durability
• Surface mount design allows for compact, efficient layouts
• Operating temperature range of -55°C to +150°C enhances adaptability

Applications

• Used in battery-operated DC motor inverters
• Employed for system or load switching in varied circuits
• Applicable for drive operations within automation systems
• Utilised in power management systems for improved efficiency

How does this component perform under extreme temperatures?

It operates effectively within a wide temperature range from -55°C to +150°C, ensuring dependability in various environments.

What is the benefit of the low on-resistance feature?

A low Rds(on) value decreases power loss in applications, leading to enhanced overall efficiency and thermal performance.

Can this device handle pulsed currents?

Yes, it can manage pulsed drain currents effectively, making it suitable for dynamic applications in electronics.

How is it mounted in circuits?

The device is designed for surface mount applications, facilitating compact assembly and efficient space utilisation on PCBs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	5.8 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	TSOP-6
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	66 mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation	2 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Length	3mm
	Width	1.75mm
	Height	1.3mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 5.8 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type TSOP-6
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 66 mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation 2 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Length 3mm
	Width 1.75mm
	Height 1.3mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

Be the first to know about our latest products and services

Join our mailing list today:

The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.