Infineon HEXFET P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 IRFTS9342TRPBF

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RS Stock No.:
165-8190
Mfr. Part No.:
IRFTS9342TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP-6

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Width

1.75mm

Height

1.3mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 5.8A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRFTS9342TRPBF


This MOSFET is designed for high efficiency across various applications, playing a critical role in electronic circuits that require enhanced performance and dependability. Its low on-resistance and significant current-handling capabilities contribute to energy efficiency and system stability in automation and electrical applications.

Features & Benefits


• Low Rds(on) improves energy efficiency
• Continuous drain current support of 5.8 A for effective performance
• Maximum drain-source voltage of 30 V ensures durability
• Surface mount design allows for compact, efficient layouts
• Operating temperature range of -55°C to +150°C enhances adaptability

Applications


• Used in battery-operated DC motor inverters
• Employed for system or load switching in varied circuits
• Applicable for drive operations within automation systems
• Utilised in power management systems for improved efficiency

How does this component perform under extreme temperatures?


It operates effectively within a wide temperature range from -55°C to +150°C, ensuring dependability in various environments.

What is the benefit of the low on-resistance feature?


A low Rds(on) value decreases power loss in applications, leading to enhanced overall efficiency and thermal performance.

Can this device handle pulsed currents?


Yes, it can manage pulsed drain currents effectively, making it suitable for dynamic applications in electronics.

How is it mounted in circuits?


The device is designed for surface mount applications, facilitating compact assembly and efficient space utilisation on PCBs.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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