P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 Infineon IRLHS2242TRPBF

RS Stock No.:: 168-6031
Mfr. Part No.:: IRLHS2242TRPBF
Brand:: Infineon

P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 Infineon IRLHS2242TRPBF

Subtotal (1 reel of 4000 units)**

£284.00

(exc. VAT)

£340.00

(inc. VAT)

24000 In stock - FREE next working day delivery available*

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FREE delivery for orders over £50.00

Units	Per unit	Per Reel**
4000 +	£0.071	£284.00

**price indicative

RS Stock No.:: 168-6031
Mfr. Part No.:: IRLHS2242TRPBF
Brand:: Infineon

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF

This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.

Features & Benefits

• Low Rds(on) ensures high efficiency and reduced heat generation
• Capable of handling continuous drain current of 7.2A for robust performance
• Compact 6-pin DFN package facilitates easy integration into limited spaces
• Enhancement mode operation allows for versatile design options
• Provides excellent thermal resistance for improved longevity

Applications

• Used for system/load switching in automation systems
• Ideal for charge and discharge switching in battery management
• Suitable for compact electronic devices requiring high efficiency
• Employed in electrical control systems and power management circuits

What is the significance of the low Rds(on) feature?

The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is vital for high power applications.

How does this component manage thermal performance?

It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.

Can it handle varying operational environments?

Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.

Is it suitable for high-frequency applications?

The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.

What are the mounting requirements for optimal performance?

For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	7.2 A
Maximum Drain Source Voltage	20 V
Series	HEXFET
Package Type	DFN2020
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	53 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	9.6 W
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Length	2.1mm
Typical Gate Charge @ Vgs	12 nC @ 10 V
Number of Elements per Chip	1
Width	2.1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	0.95mm