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Infineon HEXFET P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF

RS Stock No.:: 168-6031
Mfr. Part No.:: IRLHS2242TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF

Bulk discount available

Subtotal (1 reel of 4000 units)*

£400.00

(exc. VAT)

£480.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

24,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
4000 - 4000	£0.10	£400.00
8000 +	£0.095	£380.00

*price indicative

RS Stock No.:: 168-6031
Mfr. Part No.:: IRLHS2242TRPBF
Brand:: Infineon

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF

This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.

Features & Benefits

• Low Rds(on) ensures high efficiency and reduced heat generation
• Capable of handling continuous drain current of 7.2A for robust performance
• Compact 6-pin DFN package facilitates easy integration into limited spaces
• Enhancement mode operation allows for versatile design options
• Provides excellent thermal resistance for improved longevity

Applications

• Used for system/load switching in automation systems
• Ideal for charge and discharge switching in battery management
• Suitable for compact electronic devices requiring high efficiency
• Employed in electrical control systems and power management circuits

What is the significance of the low Rds(on) feature?

The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is vital for high power applications.

How does this component manage thermal performance?

It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.

Can it handle varying operational environments?

Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.

Is it suitable for high-frequency applications?

The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	7.2 A
	Maximum Drain Source Voltage	20 V
	Series	HEXFET
	Package Type	DFN2020
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	53 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	9.6 W
	Maximum Gate Source Voltage	-12 V, +12 V
	Width	2.1mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Length	2.1mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	0.95mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 7.2 A
	Maximum Drain Source Voltage 20 V
	Series HEXFET
	Package Type DFN2020
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 53 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 9.6 W
	Maximum Gate Source Voltage -12 V, +12 V
	Width 2.1mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Length 2.1mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 0.95mm

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