Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF

RS Stock No.:: 130-1018
Mfr. Part No.:: IRLHS2242TRPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF

Subtotal (1 pack of 25 units)*

£5.25

(exc. VAT)

£6.25

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 26,725 unit(s), ready to ship

Units	Per unit	Per Pack*
25 +	£0.21	£5.25

*price indicative

RS Stock No.:: 130-1018
Mfr. Part No.:: IRLHS2242TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	53mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	9.6W
	Maximum Operating Temperature	150°C
	Length	2.1mm
	Width	2.1 mm
	Standards/Approvals	No
	Height	0.95mm
	Automotive Standard	No
	Distrelec Product Id	304-36-993

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 53mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 9.6W
	Maximum Operating Temperature 150°C
	Length 2.1mm
	Width 2.1 mm
	Standards/Approvals No
	Height 0.95mm
	Automotive Standard No
	Distrelec Product Id 304-36-993

Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF

This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.

Features & Benefits

• Low Rds(on) ensures high efficiency and reduced heat generation

• Capable of handling continuous drain current of 7.2A for robust performance

• Compact 6-pin DFN package facilitates easy integration into limited spaces

• Enhancement mode operation allows for versatile design options

• Provides excellent thermal resistance for improved longevity

Applications

• Used for system/load switching in automation systems

• Ideal for charge and discharge switching in battery management

• Suitable for Compact electronic devices requiring high efficiency

• Employed in electrical control systems and power management circuits

What is the significance of the low Rds(on) feature?

The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is VITAL for high power applications.

How does this component manage thermal performance?

It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.

Can it handle varying operational environments?

Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.

Is it suitable for high-frequency applications?

The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.

What are the mounting requirements for optimal performance?

For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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