Infineon HEXFET P-Channel MOSFET, 6.9 A, 20 V, 6-Pin TSOP-6 IRLTS2242TRPBF

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Subtotal (1 reel of 3000 units)*

£303.00

(exc. VAT)

£363.00

(inc. VAT)

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3000 - 3000£0.101£303.00
6000 - 6000£0.096£288.00
9000 +£0.092£276.00

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RS Stock No.:
165-5841
Mfr. Part No.:
IRLTS2242TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

6.9 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Length

3mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.75mm

Height

1.3mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel Power MOSFET 12V to 20V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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