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Infineon HEXFET N-Channel MOSFET, 6.5 A, 20 V, 6-Pin Micro6 IRLMS2002TRPBF

RS Stock No.:: 830-3326
Mfr. Part No.:: IRLMS2002TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 6.5 A, 20 V, 6-Pin Micro6 IRLMS2002TRPBF

Subtotal (1 pack of 30 units)*

£9.93

(exc. VAT)

£11.91

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 840 unit(s) shipping from 08 September 2025
Plus 999,999,150 unit(s) shipping from 02 February 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
30 +	£0.331	£9.93

*price indicative

RS Stock No.:: 830-3326
Mfr. Part No.:: IRLMS2002TRPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	6.5 A
	Maximum Drain Source Voltage	20 V
	Package Type	Micro6
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	45 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.2V
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Length	3mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	15 nC @ 5 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	1.75mm
	Minimum Operating Temperature	-55 °C
	Height	1.3mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 6.5 A
	Maximum Drain Source Voltage 20 V
	Package Type Micro6
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 45 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.2V
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 2 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Length 3mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 15 nC @ 5 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 1.75mm
	Minimum Operating Temperature -55 °C
	Height 1.3mm
	Forward Diode Voltage 1.2V

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 6.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRLMS2002TRPBF

This N-channel MOSFET is designed for effective performance in battery management and load management applications. Its ability to provide low on-resistance alongside high temperature resilience contributes to efficient operation across diverse electronic systems. With state-of-the-art processing techniques, this product is ideal for professionals in the automation, electronics, and electrical sectors.

Features & Benefits

• Surface mount design minimises PCB space usage
• Low on-resistance enhances power efficiency
• Continuous drain current capability of up to 6.5A
• Supports ±12V gate-to-source voltage for flexible control
• Efficient thermal performance reduces heat generation

Applications

• Battery management for optimal energy distribution
• Load management in various electronic devices
• Automotive requiring robust power handling
• High-efficiency power supply systems
• Renewable energy systems for energy regulation

What is the maximum continuous drain current at elevated temperatures?

At a temperature of 70°C, a continuous drain current of 5.2A can be achieved while maintaining stability under specified conditions.

What is the thermal resistance for effective performance?

The maximum junction-to-ambient thermal resistance is 62.5°C/W, ensuring effective heat dissipation during operation.

How do I ensure optimum performance during installation?

Proper thermal management and careful consideration of PCB layout are essential for optimal performance, allowing for efficient heat dissipation and reliability.

What voltage can be applied without risking breakdown?

The maximum drain-source voltage is 20V, which serves as a critical threshold to prevent unnecessary breakdown during operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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