Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 50 units)*

£30.90

(exc. VAT)

£37.10

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Pack*
50 - 200£0.618£30.90
250 - 950£0.404£20.20
1000 - 2450£0.315£15.75
2500 +£0.265£13.25

*price indicative

Packaging Options:
RS Stock No.:
826-9064
Mfr. Part No.:
SPD04P10PLGBTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.41mm

Related links