P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

RS Stock No.:: 826-9064
Mfr. Part No.:: SPD04P10PLGBTMA1
Brand:: Infineon

P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

Available to back order for despatch when stock is available

Price Each (In a Pack of 50)

£0.618

(exc. VAT)

£0.742

(inc. VAT)

Units	Per unit	Per Pack*
50 - 200	£0.618	£30.90
250 - 950	£0.404	£20.20
1000 - 2450	£0.315	£15.75
2500 +	£0.265	£13.25
*price indicative

RS Stock No.:: 826-9064
Mfr. Part No.:: SPD04P10PLGBTMA1
Brand:: Infineon

SPD04P10PL G, SIPMOS Power-Transistor
ESD Control Selection Guide V1

RS Stock No.:: 826-9064
Mfr. Part No.:: SPD04P10PLGBTMA1
Brand:: Infineon

SPD04P10PL G, SIPMOS Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.2 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	SIPMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.05 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	6.22mm
Length	6.73mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	12 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Height	2.41mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.2 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	SIPMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.05 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	6.22mm
Length	6.73mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	12 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Height	2.41mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

Infineon SIPMOS® P-Channel MOSFETs

Infineon SIPMOS® P-Channel MOSFETs

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