IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3

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£17.32

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£20.78

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1 - 4£17.32
5 - 9£14.91
10 - 29£14.29
30 - 89£13.23
90 +£12.54

*price indicative

Packaging Options:
RS Stock No.:
801-1382
Mfr. Part No.:
IXFH18N100Q3
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

660mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

90nC

Maximum Power Dissipation Pd

830W

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

16.26mm

Width

5.3 mm

Standards/Approvals

No

Height

16.26mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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