IXYS HiperFET, Q3-Class N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3
- RS Stock No.:
- 801-1382
- Mfr. Part No.:
- IXFH18N100Q3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£17.32
(exc. VAT)
£20.78
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 29 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £17.32 |
| 5 - 9 | £14.91 |
| 10 - 29 | £14.29 |
| 30 - 89 | £13.23 |
| 90 + | £12.54 |
*price indicative
- RS Stock No.:
- 801-1382
- Mfr. Part No.:
- IXFH18N100Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Series | HiperFET, Q3-Class | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 660 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 830 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.3mm | |
| Transistor Material | Si | |
| Length | 16.26mm | |
| Typical Gate Charge @ Vgs | 90 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.26mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series HiperFET, Q3-Class | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 660 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 830 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Length 16.26mm | ||
Typical Gate Charge @ Vgs 90 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 16.26mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 18 A 3-Pin TO-247 IXFH18N100Q3
- IXYS HiperFET 18 A 3-Pin TO-268 IXFT18N100Q3
- IXYS HiperFET 18 A 3-Pin ISOPLUS247 IXFR24N100Q3
- IXYS HiperFET 15 A 3-Pin TO-247 IXFH15N100Q3
- IXYS HiperFET 50 A 3-Pin TO-247 IXFH50N60P3
- IXYS HiperFET 70 A 3-Pin TO-247 IXFH70N20Q3
- IXYS HiperFET 30 A 3-Pin TO-247 IXFH30N50Q3
- IXYS HiperFET 32 A 3-Pin TO-264 IXFK32N100Q3