IXYS HiperFET, Q3-Class N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

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Subtotal (1 tube of 30 units)*

£624.06

(exc. VAT)

£748.86

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£20.802£624.06

*price indicative

RS Stock No.:
168-4716
Mfr. Part No.:
IXFX32N100Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

1000 V

Package Type

PLUS247

Series

HiperFET, Q3-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Width

5.21mm

Typical Gate Charge @ Vgs

195 nC @ 10 V

Height

21.34mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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