IXYS HiperFET, Q3-Class N-Channel MOSFET, 24 A, 1000 V, 3-Pin TO-264 IXFK24N100Q3
- RS Stock No.:
- 801-1405
- Distrelec Article No.:
- 302-53-345
- Mfr. Part No.:
- IXFK24N100Q3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£22.76
(exc. VAT)
£27.31
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 50 unit(s) shipping from 11 February 2026
- Plus 999,999,949 unit(s) shipping from 01 October 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £22.76 |
| 5 - 9 | £17.80 |
| 10 - 24 | £17.33 |
| 25 - 74 | £16.87 |
| 75 + | £16.46 |
*price indicative
- RS Stock No.:
- 801-1405
- Distrelec Article No.:
- 302-53-345
- Mfr. Part No.:
- IXFK24N100Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | TO-264 | |
| Series | HiperFET, Q3-Class | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 440 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 1 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 19.96mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.13mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 26.16mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type TO-264 | ||
Series HiperFET, Q3-Class | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 440 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 1 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 19.96mm | ||
Number of Elements per Chip 1 | ||
Width 5.13mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 26.16mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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