IXYS HiperFET, Q3-Class N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3
- RS Stock No.:
- 168-4708
- Mfr. Part No.:
- IXFR24N100Q3
- Brand:
- IXYS
Subtotal (1 tube of 30 units)*
£688.62
(exc. VAT)
£826.35
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 August 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £22.954 | £688.62 |
*price indicative
- RS Stock No.:
- 168-4708
- Mfr. Part No.:
- IXFR24N100Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Series | HiperFET, Q3-Class | |
| Package Type | ISOPLUS247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 490 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 500 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
| Length | 16.13mm | |
| Height | 21.34mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series HiperFET, Q3-Class | ||
Package Type ISOPLUS247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 490 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 500 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Length 16.13mm | ||
Height 21.34mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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