IXYS HiperFET, Q3-Class N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

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Subtotal (1 tube of 30 units)*

£688.62

(exc. VAT)

£826.35

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£22.954£688.62

*price indicative

RS Stock No.:
168-4708
Mfr. Part No.:
IXFR24N100Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET, Q3-Class

Package Type

ISOPLUS247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

490 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.21mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Length

16.13mm

Height

21.34mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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