IXYS HiperFET, Q3-Class N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

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Subtotal (1 tube of 30 units)*

£419.76

(exc. VAT)

£503.70

(inc. VAT)

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30 +£13.992£419.76

*price indicative

RS Stock No.:
168-4707
Mfr. Part No.:
IXFR15N100Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

1000 V

Package Type

ISOPLUS247

Series

HiperFET, Q3-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

16.13mm

Height

21.34mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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