IXYS HiperFET, Q3-Class N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

View all MOSFETs

Subtotal (1 tube of 30 units)*

£419.76

(exc. VAT)

£503.70

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 +£13.992£419.76

*price indicative

RS Stock No.:
168-4707
Mfr. Part No.:
IXFR15N100Q3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

1000 V

Package Type

ISOPLUS247

Series

HiperFET, Q3-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

16.13mm

Width

5.21mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.34mm

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links