IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin TO-264 IXFK32N100Q3
- RS Stock No.:
- 801-1409
- Distrelec Article No.:
- 302-53-348
- Mfr. Part No.:
- IXFK32N100Q3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£36.16
(exc. VAT)
£43.39
(inc. VAT)
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- Shipping from 12 October 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £36.16 |
| 5 - 9 | £30.78 |
| 10 - 24 | £29.44 |
| 25 - 74 | £28.39 |
| 75 + | £27.81 |
*price indicative
- RS Stock No.:
- 801-1409
- Distrelec Article No.:
- 302-53-348
- Mfr. Part No.:
- IXFK32N100Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Maximum Operating Temperature | 150°C | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Standards/Approvals | No | |
| Width | 5.13 mm | |
| Distrelec Product Id | 30253348 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 1.25kW | ||
Maximum Operating Temperature 150°C | ||
Length 19.96mm | ||
Height 26.16mm | ||
Standards/Approvals No | ||
Width 5.13 mm | ||
Distrelec Product Id 30253348 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 32 A 3-Pin TO-264 IXFK32N100Q3
- IXYS HiperFET 32 A 3-Pin PLUS247 IXFX32N100Q3
- IXYS HiperFET 24 A 3-Pin TO-264 IXFK24N100Q3
- IXYS HiperFET 48 A 3-Pin TO-264 IXFK48N60Q3
- IXYS HiperFET 64 A 3-Pin TO-264 IXFK64N50Q3
- IXYS HiperFET 32 A 3-Pin ISOPLUS247 IXFR48N60Q3
- IXYS HiperFET 32 A 3-Pin PLUS247 IXFX32N80Q3
- IXYS HiperFET 18 A 3-Pin TO-247 IXFH18N100Q3