Nexperia P-Channel MOSFET, 150 mA, 50 V, 3-Pin SOT-323 BSS84AKW,115
- RS Stock No.:
- 792-0910
- Mfr. Part No.:
- BSS84AKW,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 reel of 100 units)*
£10.90
(exc. VAT)
£13.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
- Plus 4,600 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 100 - 200 | £0.109 | £10.90 |
| 300 - 500 | £0.105 | £10.50 |
| 600 - 1100 | £0.08 | £8.00 |
| 1200 - 2300 | £0.06 | £6.00 |
| 2400 + | £0.057 | £5.70 |
*price indicative
- RS Stock No.:
- 792-0910
- Mfr. Part No.:
- BSS84AKW,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 150 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 310 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 2.2mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 0.26 nC @ 5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.35mm | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 150 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 310 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2.2mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 0.26 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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