Nexperia Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 BSS84AKS,115
- RS Stock No.:
- 792-0917
- Mfr. Part No.:
- BSS84AKS,115
- Brand:
- Nexperia
Subtotal (1 tape of 30 units)*
£3.18
(exc. VAT)
£3.81
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 8,370 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 30 + | £0.106 | £3.18 |
*price indicative
- RS Stock No.:
- 792-0917
- Mfr. Part No.:
- BSS84AKS,115
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 160 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 7.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 320 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 0.26 nC @ 5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.35mm | |
| Transistor Material | Si | |
| Length | 2.2mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 160 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 7.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 320 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 0.26 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Transistor Material Si | ||
Length 2.2mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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