onsemi PowerTrench N-Channel MOSFET, 9.5 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA410NZ
- RS Stock No.:
- 739-6241
- Mfr. Part No.:
- FDMA410NZ
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.64
(exc. VAT)
£5.57
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.928 | £4.64 |
| 50 - 95 | £0.80 | £4.00 |
| 100 - 495 | £0.694 | £3.47 |
| 500 - 995 | £0.61 | £3.05 |
| 1000 + | £0.554 | £2.77 |
*price indicative
- RS Stock No.:
- 739-6241
- Mfr. Part No.:
- FDMA410NZ
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | PowerTrench | |
| Package Type | MicroFET 2 x 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 10 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2mm | |
| Number of Elements per Chip | 1 | |
| Width | 2mm | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type MicroFET 2 x 2 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 10 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2mm | ||
Number of Elements per Chip 1 | ||
Width 2mm | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
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