onsemi PowerTrench N-Channel MOSFET, 9.5 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA410NZ
- RS Stock No.:
- 166-1819
- Mfr. Part No.:
- FDMA410NZ
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£903.00
(exc. VAT)
£1,083.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 February 2026
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.301 | £903.00 |
*price indicative
- RS Stock No.:
- 166-1819
- Mfr. Part No.:
- FDMA410NZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 9.5 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | MicroFET 2 x 2 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 50 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 900 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Number of Elements per Chip | 1 | |
Length | 2mm | |
Maximum Operating Temperature | +150 °C | |
Width | 2mm | |
Typical Gate Charge @ Vgs | 10 nC @ 4.5 V | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 0.75mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MicroFET 2 x 2 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Width 2mm | ||
Typical Gate Charge @ Vgs 10 nC @ 4.5 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench N-Channel MOSFET 20 V, 6-Pin MicroFET 2 x 2 FDMA410NZ
- onsemi PowerTrench N-Channel MOSFET 40 V, 6-Pin MicroFET 2 x 2 FDMA8051L
- onsemi PowerTrench Dual N/P-Channel MOSFET 3.7 A 6-Pin MicroFET 2 x 2 FDMA1032CZ
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin MicroFET 2 x 2 FDMA1024NZ
- onsemi PowerTrench P-Channel MOSFET 20 V, 6-Pin MicroFET 2 x 2 FDMA910PZ
- onsemi PowerTrench P-Channel MOSFET 12 V, 6-Pin MicroFET 2 x 2 FDME905PT
- onsemi PowerTrench P-Channel MOSFET 12 V, 6-Pin MicroFET 2 x 2 FDMA908PZ
- onsemi PowerTrench Dual P-Channel MOSFET 30 V, 6-Pin MicroFET 2 x 2 FDMA3023PZ