onsemi PowerTrench P-Channel MOSFET, 9.4 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA910PZ
- RS Stock No.:
- 806-3488
- Mfr. Part No.:
- FDMA910PZ
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 10 units)*
£4.66
(exc. VAT)
£5.59
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,990 unit(s) shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | £0.466 | £4.66 |
| 100 - 240 | £0.449 | £4.49 |
| 250 - 490 | £0.437 | £4.37 |
| 500 - 990 | £0.426 | £4.26 |
| 1000 + | £0.416 | £4.16 |
*price indicative
- RS Stock No.:
- 806-3488
- Mfr. Part No.:
- FDMA910PZ
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 9.4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | MicroFET 2 x 2 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 34 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 2.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 2mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 21 nC @ 4.5 V | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MicroFET 2 x 2 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 2mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 21 nC @ 4.5 V | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
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