onsemi PowerTrench P-Channel MOSFET, 9.4 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA910PZ
- RS Stock No.:
- 806-3488
- Mfr. Part No.:
- FDMA910PZ
- Brand:
- onsemi
Subtotal (1 tape of 10 units)*
£4.66
(exc. VAT)
£5.59
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 05 March 2026
Units | Per unit | Per Tape* |
---|---|---|
10 - 90 | £0.466 | £4.66 |
100 - 240 | £0.449 | £4.49 |
250 - 490 | £0.437 | £4.37 |
500 - 990 | £0.426 | £4.26 |
1000 + | £0.416 | £4.16 |
*price indicative
- RS Stock No.:
- 806-3488
- Mfr. Part No.:
- FDMA910PZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 9.4 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | MicroFET 2 x 2 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 34 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 2.4 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 21 nC @ 4.5 V | |
Transistor Material | Si | |
Width | 2mm | |
Length | 2mm | |
Height | 0.75mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MicroFET 2 x 2 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 21 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 2mm | ||
Length 2mm | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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