onsemi PowerTrench Dual P-Channel MOSFET, 3.7 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA1023PZ
- RS Stock No.:
- 739-6213
- Mfr. Part No.:
- FDMA1023PZ
- Brand:
- onsemi
Save 40% when you buy 1000 units
Subtotal (1 pack of 5 units)*
£4.94
(exc. VAT)
£5.93
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.988 | £4.94 |
| 50 - 95 | £0.852 | £4.26 |
| 100 - 495 | £0.738 | £3.69 |
| 500 - 995 | £0.65 | £3.25 |
| 1000 + | £0.59 | £2.95 |
*price indicative
- RS Stock No.:
- 739-6213
- Mfr. Part No.:
- FDMA1023PZ
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | MicroFET 2 x 2 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 195 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.5 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 8.6 nC @ 10 V | |
| Width | 2mm | |
| Number of Elements per Chip | 2 | |
| Length | 2mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MicroFET 2 x 2 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 195 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.5 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 8.6 nC @ 10 V | ||
Width 2mm | ||
Number of Elements per Chip 2 | ||
Length 2mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
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