PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	12 V
	Package Type	MicroFET 2 x 2
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	82 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	2.4 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-8 V, +8 V
	Typical Gate Charge @ Vgs	21 nC @ 4.5 V
	Width	2mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Length	2mm
	Minimum Operating Temperature	-55 °C
	Height	0.725mm
	Forward Diode Voltage	1.2V

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 12 V
	Package Type MicroFET 2 x 2
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 82 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 2.4 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -8 V, +8 V
	Typical Gate Charge @ Vgs 21 nC @ 4.5 V
	Width 2mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Length 2mm
	Minimum Operating Temperature -55 °C
	Height 0.725mm
	Forward Diode Voltage 1.2V

onsemi PowerTrench P-Channel MOSFET, 10 A, 12 V, 6-Pin MicroFET 2 x 2 FDMA905P

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

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