onsemi PowerTrench P-Channel MOSFET, 10 A, 12 V, 6-Pin MicroFET 2 x 2 FDMA905P
- RS Stock No.:
- 806-3484
- Mfr. Part No.:
- FDMA905P
- Brand:
- onsemi
Subtotal (1 pack of 10 units)*
£1.29
(exc. VAT)
£1.55
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,520 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 + | £0.129 | £1.29 |
*price indicative
- RS Stock No.:
- 806-3484
- Mfr. Part No.:
- FDMA905P
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 10 A | |
Maximum Drain Source Voltage | 12 V | |
Series | PowerTrench | |
Package Type | MicroFET 2 x 2 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 82 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 2.4 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 2mm | |
Typical Gate Charge @ Vgs | 21 nC @ 4.5 V | |
Transistor Material | Si | |
Width | 2mm | |
Minimum Operating Temperature | -55 °C | |
Height | 0.725mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 12 V | ||
Series PowerTrench | ||
Package Type MicroFET 2 x 2 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 82 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 2mm | ||
Typical Gate Charge @ Vgs 21 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.725mm | ||
Forward Diode Voltage 1.2V | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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