onsemi PowerTrench P-Channel MOSFET, 10 A, 12 V, 6-Pin MicroFET 2 x 2 FDMA905P

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Subtotal (1 pack of 10 units)*

£1.29

(exc. VAT)

£1.55

(inc. VAT)

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10 +£0.129£1.29

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Packaging Options:
RS Stock No.:
806-3484
Mfr. Part No.:
FDMA905P
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

12 V

Series

PowerTrench

Package Type

MicroFET 2 x 2

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

21 nC @ 4.5 V

Transistor Material

Si

Width

2mm

Minimum Operating Temperature

-55 °C

Height

0.725mm

Forward Diode Voltage

1.2V

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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