Infineon HEXFET N-Channel MOSFET, 92 A, 30 V, 3-Pin TO-220AB IRLB8748PBF

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£4.20

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£5.05

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5 - 20£0.84£4.20
25 - 45£0.798£3.99
50 - 120£0.718£3.59
125 - 245£0.646£3.23
250 +£0.614£3.07

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RS Stock No.:
725-9329
Mfr. Part No.:
IRLB8748PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

92 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Width

4.83mm

Height

9.02mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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