Infineon HEXFET N-Channel MOSFET, 350 A, 40 V, 3-Pin TO-247AC IRFP4004PBF
- RS Stock No.:
- 688-6986
- Distrelec Article No.:
- 302-84-051
- Mfr. Part No.:
- IRFP4004PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£4.17
(exc. VAT)
£5.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 24 unit(s) ready to ship
- Plus 13 unit(s) ready to ship from another location
- Plus 557 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £4.17 |
| 10 - 24 | £3.96 |
| 25 - 49 | £3.88 |
| 50 - 99 | £3.63 |
| 100 + | £3.39 |
*price indicative
- RS Stock No.:
- 688-6986
- Distrelec Article No.:
- 302-84-051
- Mfr. Part No.:
- IRFP4004PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 350 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 380 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Typical Gate Charge @ Vgs | 220 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 350 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 380 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 15.87mm | ||
Width 5.31mm | ||
Typical Gate Charge @ Vgs 220 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-247AC IRFP4004PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-247AC IRFP4368PBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-247AC IRLP3034PBF
- Infineon HEXFET N-Channel MOSFET 300 V, 3-Pin TO-247AC IRFP4868PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-247AC IRFP2907PBF
- Infineon HEXFET N-Channel MOSFET 250 V, 3-Pin TO-247AC IRFP4768PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-247AC IRFP140NPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-247AC IRFP3206PBF