IXYS Linear N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L
- RS Stock No.:
- 686-7840
- Distrelec Article No.:
- 302-53-422
- Mfr. Part No.:
- IXTH12N100L
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£21.03
(exc. VAT)
£25.24
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 810 unit(s) shipping from 16 October 2025
- Plus 120 unit(s) shipping from 21 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £21.03 |
| 2 - 4 | £17.35 |
| 5 - 9 | £16.83 |
| 10 - 19 | £16.36 |
| 20 + | £15.55 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each
£6.92
(exc. VAT)
£8.30
(inc. VAT)
- RS Stock No.:
- 686-7840
- Distrelec Article No.:
- 302-53-422
- Mfr. Part No.:
- IXTH12N100L
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | TO-247 | |
| Series | Linear | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 400 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 155 nC @ 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.26mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 5.3mm | |
| Height | 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type TO-247 | ||
Series Linear | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 400 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 155 nC @ 20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 16.26mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.3mm | ||
Height 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
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