IXYS Linear N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L

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Subtotal (1 tube of 10 units)*

£447.48

(exc. VAT)

£536.98

(inc. VAT)

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  • 250 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 +£44.748£447.48

*price indicative

RS Stock No.:
168-4610
Mfr. Part No.:
IXTN22N100L
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Series

Linear

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

270 nC @ 15 V

Number of Elements per Chip

1

Length

38.2mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

25.07mm

Minimum Operating Temperature

-55 °C

Height

9.6mm

COO (Country of Origin):
US

N-Channel Power MOSFET, IXYS Linear Series


N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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