STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z
- RS Stock No.:
- 920-6588
- Mfr. Part No.:
- STW11NK100Z
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£103.35
(exc. VAT)
£124.02
(inc. VAT)
FREE delivery for orders over £50.00
- 30 unit(s) ready to ship
- Plus 90 unit(s) shipping from 11 February 2026
Units | Per unit | Per Tube* |
---|---|---|
30 - 60 | £3.445 | £103.35 |
90 - 480 | £2.753 | £82.59 |
510 - 960 | £2.453 | £73.59 |
990 + | £2.071 | £62.13 |
*price indicative
- RS Stock No.:
- 920-6588
- Mfr. Part No.:
- STW11NK100Z
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 8.3 A | |
Maximum Drain Source Voltage | 1000 V | |
Series | MDmesh, SuperMESH | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.38 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 230 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 113 nC @ 10 V | |
Transistor Material | Si | |
Length | 15.75mm | |
Width | 5.15mm | |
Height | 20.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.3 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.38 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 113 nC @ 10 V | ||
Transistor Material Si | ||
Length 15.75mm | ||
Width 5.15mm | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
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