STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 6.5 A, 1000 V, 3-Pin TO-220FP STF8NK100Z
- RS Stock No.:
- 920-6667
- Mfr. Part No.:
- STF8NK100Z
- Brand:
- STMicroelectronics
Subtotal (1 tube of 50 units)*
£138.55
(exc. VAT)
£166.25
(inc. VAT)
FREE delivery for orders over £50.00
- 50 unit(s) ready to ship
- Plus 999,999,900 unit(s) shipping from 24 December 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £2.771 | £138.55 |
100 - 450 | £2.222 | £111.10 |
500 - 950 | £1.967 | £98.35 |
1000 - 4950 | £1.66 | £83.00 |
5000 + | £1.615 | £80.75 |
*price indicative
- RS Stock No.:
- 920-6667
- Mfr. Part No.:
- STF8NK100Z
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.5 A | |
Maximum Drain Source Voltage | 1000 V | |
Series | MDmesh, SuperMESH | |
Package Type | TO-220FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.85 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 102 nC @ 10 V | |
Length | 10.4mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Width | 4.6mm | |
Minimum Operating Temperature | -55 °C | |
Height | 16.4mm | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.5 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.85 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 102 nC @ 10 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.4mm | ||
Related links
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