STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220 STP5NK100Z
- RS Stock No.:
- 687-5327
- Mfr. Part No.:
- STP5NK100Z
- Brand:
- STMicroelectronics
Subtotal (1 pack of 2 units)*
£5.60
(exc. VAT)
£6.72
(inc. VAT)
FREE delivery for orders over £50.00
- 24 unit(s) ready to ship
- Plus 236 unit(s) shipping from 10 September 2025
Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £2.80 | £5.60 |
10 - 24 | £2.52 | £5.04 |
26 - 98 | £2.375 | £4.75 |
100 - 498 | £1.91 | £3.82 |
500 + | £1.695 | £3.39 |
*price indicative
- RS Stock No.:
- 687-5327
- Mfr. Part No.:
- STP5NK100Z
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.5 A | |
Maximum Drain Source Voltage | 1000 V | |
Package Type | TO-220 | |
Series | MDmesh, SuperMESH | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3.7 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 4.6mm | |
Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 10.4mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 9.15mm | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.7 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.15mm | ||
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