onsemi QFET N-Channel MOSFET, 20 A, 60 V, 3-Pin TO-220AB FQP20N06
- RS Stock No.:
- 671-5051
- Mfr. Part No.:
- FQP20N06
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£4.65
(exc. VAT)
£5.60
(inc. VAT)
FREE delivery for orders over £50.00
- Final 5 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
---|---|---|
5 + | £0.93 | £4.65 |
*price indicative
- RS Stock No.:
- 671-5051
- Mfr. Part No.:
- FQP20N06
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220AB | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 53 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 10.1mm | |
Width | 4.7mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 11.5 nC @ 10 V | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 53 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.1mm | ||
Width 4.7mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 11.5 nC @ 10 V | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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