onsemi QFET N-Channel MOSFET, 20 A, 60 V, 3-Pin TO-220AB FQP20N06

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Unavailable
RS will no longer stock this product.
RS Stock No.:
671-5051
Mfr. Part No.:
FQP20N06
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.1mm

Transistor Material

Si

Width

4.7mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Height

9.4mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MY

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


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ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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