QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	52 A
	Maximum Drain Source Voltage	60 V
	Series	QFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	21 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	3.75 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	9.65mm
	Typical Gate Charge @ Vgs	24.5 nC @ 5 V
	Length	10.67mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 52 A
	Maximum Drain Source Voltage 60 V
	Series QFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 21 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 3.75 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 9.65mm
	Typical Gate Charge @ Vgs 24.5 nC @ 5 V
	Length 10.67mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 4.83mm

onsemi QFET N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

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