onsemi QFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK FQB55N10TM
- RS Stock No.:
- 166-2534
- Mfr. Part No.:
- FQB55N10TM
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£595.20
(exc. VAT)
£714.40
(inc. VAT)
FREE delivery for orders over £50.00
- 800 left, ready to ship
Units | Per unit | Per Reel* |
---|---|---|
800 + | £0.744 | £595.20 |
*price indicative
- RS Stock No.:
- 166-2534
- Mfr. Part No.:
- FQB55N10TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 55 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | D2PAK (TO-263) | |
Series | QFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 26 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 3.75 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Width | 9.65mm | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 75 nC @ 10 V | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series QFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 75 nC @ 10 V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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