onsemi QFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK FQB55N10TM
- RS Stock No.:
- 671-0914
- Mfr. Part No.:
- FQB55N10TM
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£6.95
(exc. VAT)
£8.35
(inc. VAT)
FREE delivery for orders over £50.00
- 1,265 left, ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.39 | £6.95 |
50 - 95 | £1.198 | £5.99 |
100 - 495 | £1.038 | £5.19 |
500 + | £0.914 | £4.57 |
*price indicative
- RS Stock No.:
- 671-0914
- Mfr. Part No.:
- FQB55N10TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 55 A | |
Maximum Drain Source Voltage | 100 V | |
Series | QFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 26 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 3.75 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 75 nC @ 10 V | |
Transistor Material | Si | |
Length | 10.67mm | |
Width | 9.65mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 100 V | ||
Series QFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 75 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin D2PAK FQB55N10TM
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin D2PAK FQB19N20LTM
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin D2PAK FQB50N06LTM
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin D2PAK FQB4N80TM
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin D2PAK FQB34N20LTM
- onsemi QFET N-Channel MOSFET 1000 V, 3-Pin DPAK FQD2N100TM
- onsemi QFET N-Channel MOSFET 300 V, 3-Pin TO-220AB FQP22N30
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin IPAK FQU13N10LTU