onsemi QFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK FQB55N10TM

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£6.95

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£8.35

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5 - 45£1.39£6.95
50 - 95£1.198£5.99
100 - 495£1.038£5.19
500 +£0.914£4.57

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Packaging Options:
RS Stock No.:
671-0914
Mfr. Part No.:
FQB55N10TM
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

100 V

Series

QFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

75 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

4.83mm

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Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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