PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	6.5 A, 9 A
	Maximum Drain Source Voltage	40 V
	Package Type	DPAK (TO-252)
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	5
	Maximum Drain Source Resistance	24 mΩ, 54 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	3.1 W
	Transistor Configuration	Common Drain
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	6.22mm
	Typical Gate Charge @ Vgs	14 nC @ 10 V, 17 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Length	6.73mm
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 6.5 A, 9 A
	Maximum Drain Source Voltage 40 V
	Package Type DPAK (TO-252)
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 5
	Maximum Drain Source Resistance 24 mΩ, 54 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 3.1 W
	Transistor Configuration Common Drain
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 6.22mm
	Typical Gate Charge @ Vgs 14 nC @ 10 V, 17 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Length 6.73mm
	Height 2.39mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 6.5 A, 9 A, 40 V, 5-Pin DPAK FDD8424H

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

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