onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 6.5 A, 9 A, 40 V, 5-Pin DPAK FDD8424H
- RS Stock No.:
- 671-0356
- Mfr. Part No.:
- FDD8424H
- Brand:
- onsemi
- RS Stock No.:
- 671-0356
- Mfr. Part No.:
- FDD8424H
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 6.5 A, 9 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 24 mΩ, 54 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 3.1 W | |
Transistor Configuration | Common Drain | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Length | 6.73mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 14 nC @ 10 V, 17 nC @ 10 V | |
Width | 6.22mm | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 6.5 A, 9 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 24 mΩ, 54 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 6.73mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V, 17 nC @ 10 V | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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