Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3
- RS Stock No.:
- 280-0001
- Mfr. Part No.:
- SISS5623DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 4 units)*
£7.772
(exc. VAT)
£9.328
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 5,996 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | £1.943 | £7.77 |
| 60 - 96 | £1.863 | £7.45 |
| 100 - 236 | £1.648 | £6.59 |
| 240 - 996 | £1.618 | £6.47 |
| 1000 + | £1.59 | £6.36 |
*price indicative
- RS Stock No.:
- 280-0001
- Mfr. Part No.:
- SISS5623DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiSS5623DN | |
| Package Type | 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.046Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiSS5623DN | ||
Package Type 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.046Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
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