Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

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Subtotal (1 pack of 4 units)*

£7.32

(exc. VAT)

£8.80

(inc. VAT)

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Temporarily out of stock
  • 6,000 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Pack*
4 - 56£1.83£7.32
60 - 96£1.755£7.02
100 - 236£1.553£6.21
240 - 996£1.525£6.10
1000 +£1.498£5.99

*price indicative

Packaging Options:
RS Stock No.:
280-0001
Mfr. Part No.:
SISS5623DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

36.3A

Maximum Drain Source Voltage Vds

60V

Series

SiSS5623DN

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.046Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10.1nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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