Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3
- RS Stock No.:
- 279-9994
- Mfr. Part No.:
- SISS5110DN-T1-GE3
- Brand:
- Vishay
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View bulk pricing optionsSubtotal (1 pack of 4 units)*
£6.00
(exc. VAT)
£7.20
(inc. VAT)
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- Plus 6,000 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | £1.50 | £6.00 |
| 60 - 96 | £1.125 | £4.50 |
| 100 - 236 | £1.00 | £4.00 |
| 240 - 996 | £0.978 | £3.91 |
| 1000 + | £0.955 | £3.82 |
*price indicative
- RS Stock No.:
- 279-9994
- Mfr. Part No.:
- SISS5110DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SISS | |
| Package Type | 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0126Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SISS | ||
Package Type 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0126Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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