Vishay Silicon N-Channel MOSFET, 55.9 A, 100 V, 8-Pin 1212-8S SISS5110DN-T1-GE3

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Subtotal (1 pack of 4 units)*

£6.512

(exc. VAT)

£7.816

(inc. VAT)

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Per Pack*
4 - 56£1.628£6.51
60 - 96£1.22£4.88
100 - 236£1.085£4.34
240 - 996£1.06£4.24
1000 +£1.038£4.15

*price indicative

Packaging Options:
RS Stock No.:
279-9994
Mfr. Part No.:
SISS5110DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

55.9 A

Maximum Drain Source Voltage

100 V

Package Type

1212-8S

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested

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