Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£1,902.00

(exc. VAT)

£2,283.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.634£1,902.00

*price indicative

RS Stock No.:
279-9991
Mfr. Part No.:
SISS5108DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0105Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links