Vishay Silicon N-Channel MOSFET, 55.9 A, 100 V, 8-Pin 1212-8S SISS5108DN-T1-GE3
- RS Stock No.:
- 279-9991
- Mfr. Part No.:
- SISS5108DN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,902.00
(exc. VAT)
£2,283.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.634 | £1,902.00 |
*price indicative
- RS Stock No.:
- 279-9991
- Mfr. Part No.:
- SISS5108DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 55.9 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | 1212-8S | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 55.9 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type 1212-8S | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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