Vishay Silicon N-Channel MOSFET, 40.7 A, 100 V, 8-Pin 1212-8S SISS5112DN-T1-GE3

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Subtotal (1 pack of 5 units)*

£6.80

(exc. VAT)

£8.15

(inc. VAT)

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  • 6,000 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45£1.36£6.80
50 - 95£1.156£5.78
100 - 245£1.028£5.14
250 - 995£1.008£5.04
1000 +£0.986£4.93

*price indicative

Packaging Options:
RS Stock No.:
279-9996
Mfr. Part No.:
SISS5112DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40.7 A

Maximum Drain Source Voltage

100 V

Package Type

1212-8S

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested

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