Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

Subtotal (1 reel of 3000 units)*

£1,845.00

(exc. VAT)

£2,214.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.615£1,845.00

*price indicative

RS Stock No.:
280-0000
Mfr. Part No.:
SISS5623DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

36.3A

Maximum Drain Source Voltage Vds

60V

Package Type

1212-8S

Series

SiSS5623DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.046Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

56.8W

Typical Gate Charge Qg @ Vgs

10.1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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