Vishay Silicon N-Channel MOSFET, 265 A, 80 V, 8-Pin SO-8 SIRS5800DP-T1-GE3
- RS Stock No.:
 - 279-9972
 - Mfr. Part No.:
 - SIRS5800DP-T1-GE3
 - Brand:
 - Vishay
 
Subtotal (1 reel of 3000 units)*
£3,771.00
(exc. VAT)
£4,524.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 July 2026
 
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units  | Per unit  | Per Reel*  | 
|---|---|---|
| 3000 + | £1.257 | £3,771.00 | 
*price indicative
- RS Stock No.:
 - 279-9972
 - Mfr. Part No.:
 - SIRS5800DP-T1-GE3
 - Brand:
 - Vishay
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 265 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 265 A  | ||
Maximum Drain Source Voltage 80 V  | ||
Package Type SO-8  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Channel Mode Enhancement  | ||
Number of Elements per Chip 1  | ||
Transistor Material Silicon  | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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