Vishay Silicon N-Channel MOSFET, 334 A, 60 V, 8-Pin SO-8 SIRS4600DP-T1-RE3
- RS Stock No.:
- 279-9969
- Mfr. Part No.:
- SIRS4600DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
£3.70
(exc. VAT)
£4.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
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Units | Per unit |
---|---|
1 - 49 | £3.70 |
50 - 99 | £2.77 |
100 - 249 | £2.46 |
250 - 999 | £2.42 |
1000 + | £2.36 |
*price indicative
- RS Stock No.:
- 279-9969
- Mfr. Part No.:
- SIRS4600DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 334 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SO-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 334 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
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