Vishay SIRS Type N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3
- RS Stock No.:
- 279-9969
- Mfr. Part No.:
- SIRS4600DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
£3.74
(exc. VAT)
£4.49
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 49 | £3.74 |
| 50 - 99 | £2.80 |
| 100 - 249 | £2.49 |
| 250 - 999 | £2.45 |
| 1000 + | £2.39 |
*price indicative
- RS Stock No.:
- 279-9969
- Mfr. Part No.:
- SIRS4600DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 334A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00115Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 334A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00115Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
Related links
- Vishay Silicon N-Channel MOSFET 60 V, 8-Pin SO-8 SIRS4600DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 SIR5112DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 SIR5110DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 SIR5108DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 80 V, 8-Pin SO-8 SIR5808DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 40 V, 8-Pin SO-8 SIRS4400DP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
