Vishay SIRS Type N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3
- RS Stock No.:
- 279-9968
- Mfr. Part No.:
- SIRS4600DP-T1-RE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£4,605.00
(exc. VAT)
£5,526.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £1.535 | £4,605.00 |
*price indicative
- RS Stock No.:
- 279-9968
- Mfr. Part No.:
- SIRS4600DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 334A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIRS | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00115Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 240W | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 334A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIRS | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00115Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 240W | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
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