Vishay Silicon N-Channel MOSFET, 225 A, 100 V, 8-Pin SO-8 SIRS5100DP-T1-GE3

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Subtotal (1 pack of 2 units)*

£6.11

(exc. VAT)

£7.332

(inc. VAT)

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Temporarily out of stock
  • 5,996 unit(s) shipping from 04 December 2025
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Units
Per unit
Per Pack*
2 - 48£3.055£6.11
50 - 98£2.29£4.58
100 - 248£2.035£4.07
250 - 998£1.99£3.98
1000 +£1.95£3.90

*price indicative

Packaging Options:
RS Stock No.:
279-9971
Mfr. Part No.:
SIRS5100DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

225 A

Maximum Drain Source Voltage

100 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested

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