Vishay SIRS Type N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3
- RS Stock No.:
- 279-9971
- Mfr. Part No.:
- SIRS5100DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
£6.44
(exc. VAT)
£7.72
(inc. VAT)
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In Stock
- Plus 2,988 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | £3.22 | £6.44 |
| 50 - 98 | £2.415 | £4.83 |
| 100 - 248 | £2.145 | £4.29 |
| 250 - 998 | £2.095 | £4.19 |
| 1000 + | £2.06 | £4.12 |
*price indicative
- RS Stock No.:
- 279-9971
- Mfr. Part No.:
- SIRS5100DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 225A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0025Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 225A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0025Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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