Vishay Silicon N-Channel MOSFET, 225 A, 100 V, 8-Pin SO-8 SIRS5100DP-T1-GE3

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£3,894.00

(exc. VAT)

£4,674.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship
  • Plus 999,993,000 unit(s) shipping from 11 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£1.298£3,894.00

*price indicative

RS Stock No.:
279-9970
Mfr. Part No.:
SIRS5100DP-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

225 A

Maximum Drain Source Voltage

100 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested

Related links