Vishay Silicon N-Channel MOSFET, 265 A, 80 V, 8-Pin SO-8 SIRS5800DP-T1-GE3

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Subtotal (1 pack of 2 units)*

£6.37

(exc. VAT)

£7.644

(inc. VAT)

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  • Shipping from 22 June 2026
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Units
Per unit
Per Pack*
2 - 48£3.185£6.37
50 - 98£2.39£4.78
100 - 248£2.125£4.25
250 - 998£2.085£4.17
1000 +£2.05£4.10

*price indicative

Packaging Options:
RS Stock No.:
279-9973
Mfr. Part No.:
SIRS5800DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

265 A

Maximum Drain Source Voltage

80 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested

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