Infineon ISC Type N-Channel OptiMOST Power-MOSFET, 63 A, 30 V Enhancement, 8-Pin PG-TDSON-8
- RS Stock No.:
- 273-3040
- Mfr. Part No.:
- ISC045N03L5SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£9.30
(exc. VAT)
£11.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,950 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.372 | £9.30 |
| 50 - 475 | £0.344 | £8.60 |
| 500 - 975 | £0.319 | £7.98 |
| 1000 - 2475 | £0.312 | £7.80 |
| 2500 + | £0.305 | £7.63 |
*price indicative
- RS Stock No.:
- 273-3040
- Mfr. Part No.:
- ISC045N03L5SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | OptiMOST Power-MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 0.89V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type OptiMOST Power-MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 0.89V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFET is offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
Easy to design in
Related links
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8 ISC045N03L5SATMA1
- Infineon ISC Type N-Channel Power Transistor 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 40 V Enhancement, 8-Pin PG-TDSON-8 ISCH42N04LM7ATMA1
- Infineon ISC Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1