Infineon ISC N-Channel MOSFET, 24 A, 120 V, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1

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£6.75

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£8.10

(inc. VAT)

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10 - 90£0.675£6.75
100 - 240£0.641£6.41
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500 - 990£0.547£5.47
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RS Stock No.:
349-151
Mfr. Part No.:
ISC320N12LM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

120 V

Series

ISC

Package Type

PG-TDSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is an N channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.

Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

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