Infineon ISC N-Channel MOSFET, 62 A, 120 V, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1

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£10.79

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£12.95

(inc. VAT)

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RS Stock No.:
349-146
Mfr. Part No.:
ISC110N12NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

120 V

Series

ISC

Package Type

PG-TDSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is an N channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.

Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

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